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Farzan Ghavanini, CTO of Smoltek

Smoltek has been granted a new patent in the Discrete CNF-MIM patent family

Smoltek has been awarded a new patent in the Discrete CNF-MIM patent family. The protected innovation in this patent family discloses a discrete capacitor component based on our CNF-MIM technology. This also brings our IP portfolio to comprise 91 granted patents.

August 16, 2024

The newly approved US-pat­ent is the fifth in order in the Dis­crete CNF-MIM pat­ent fam­ily. This pat­ent fam­ily dis­closes innov­a­tions that exploit the extra ordin­ary sur­face to volume ratio provided by car­bon nan­ofibers and pro­poses a dis­crete Met­al-Insu­lat­or-Met­al (MIM) struc­ture with unpar­alleled high capa­cit­ance density.

This pat­ent grant fur­ther strengthens our IP port­fo­lio in the field of ultra-thin capa­cit­ors, which is import­ant for us as the semi­con­duct­or industry invests aggress­ively in advanced capa­cit­or tech­no­lo­gies to match the demands of new­er integ­rated circuits.

Far­z­an Ghavanini, CTO at Smoltek

The Dis­crete CNF-MIM pat­ent fam­ily dis­closes a high-dens­ity dis­crete capa­cit­or based on Smoltek’s car­bon nan­ofiber tech­no­logy pav­ing the way for CNF based ultra-thin capa­cit­ors that can be placed adja­cent to the com­pon­ents they are sup­posed to sup­port. The pat­ent fam­ily enables the sys­tem design­ers to bring for­ward integ­ra­tion and pack­aging schemes with super­i­or per­form­ance with very small foot­print. These new schemes are vital in devel­op­ing new products in the field of IoT, wear­ables, high-per­form­ance com­put­ing (HPC), Arti­fi­cial Intel­li­gence (AI), and similar.

It is reward­ing to wit­ness that our R&D efforts as reflec­ted in our expand­ing IP port­fo­lio aligns well with the needs of the semi­con­duct­or industry and that our dis­rupt­ive tech­no­logy can solve prob­lems that tra­di­tion­al tech­no­lo­gies can­not, Far­z­an Ghavanini concludes.

Smoltek’s pat­ent port­fo­lio now glob­ally com­prises 91 gran­ted pat­ents. Read more about our IP and pat­ents.

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