Smoltek has received a new patent for improving the capacitance density of CNF-MIM capacitors

The pat­ent is the first one in a new cat­egory called Mul­tilay­er Cap, and describes a meth­od for cre­at­ing a layered capa­cit­or using a met­al-insu­lat­or-met­al (MIM) struc­ture. This meth­od involves stack­ing con­duct­or-insu­lat­or lay­ers to enhance capa­cit­ance dens­ity, a key fea­ture of Smol­tek’s CNF-MIM capa­cit­or technology.

Capa­cit­ance dens­ity is one of the most import­ant KPIs of our CNF-MIM capa­cit­or tech­no­logy. In this new pat­ent, we pro­pose a tech­nique that doubles or triples the capa­cit­ance dens­ity through an innov­at­ing multi-lay­er structure.

Far­z­an Ghavanini, CTO at Smoltek.

The pat­ent dis­closes a dis­crete met­al-insu­lat­or-met­al (MIM) capa­cit­or com­pon­ent based on the pro­pri­et­ary car­bon nan­ofiber tech­no­logy developed at Smol­tek. It also describes the struc­ture of such capa­cit­or and the related micro­fab­ric­a­tion pro­cesses to real­ize it

The pat­ent includes two main claims: one for the struc­ture of the capa­cit­or and anoth­er for the man­u­fac­tur­ing pro­cess. This inven­tion focuses on improv­ing met­al-insu­lat­or-met­al (MIM) capa­cit­ors and bat­ter­ies, includ­ing capa­cit­ors and bat­ter­ies, through a new, innov­at­ive multi-lay­er structure.

Smoltek’s pat­ent port­fo­lio now glob­ally com­prises 90 gran­ted pat­ents. Read more about our IP and pat­ents.