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Smoltek has developed the world's thinnest capacitor. The company is now demonstrating practically what it has previously claimed by producing a prototype of a CNF-MIM capacitor with a total height of just under 40 micrometers.
Smoltek can today show a capacitor prototype that is only a few micrometers high and together with the necessary substrate (component carrier) barely reaches 40 micrometers in total height. This at the same time as one can show a capacitance density of 500nF/mm2 (nanofarad per square millimeter), an equivalent series resistance below 10 mΩ (milliohm) and an internal inductance below 15 pH (picohenry).
“We have always known that our capacitor technology enables extremely thin capacitor components, but seeing is believing. Being able to show this high-performance prototype helps a lot in our work in selling the technology,” says Ola Tiverman, President of Smoltek Semi.
The need for thinner high-performance capacitors for advanced semiconductor integration will continue to grow with new generations of processors, not least for 5G applications.
“Such a thin capacitor proof-of concept that at the same time shows excellent performance is a result of Smoltek’s own R&D efforts. This also demonstrates the scalability of our CNF-MIM technology and the applicability of the technology for use in cutting-edge applications. And not least, the unique advantage that CNF-MIM provides compared to competing technology by meeting the need for increasingly thinner capacitors with high performance even in the longer term,” says Vincent Desmaris, Chief Technology Officer at Smoltek.
Based in Gothenburg – Challenging the global semiconductor industry
Smoltek, in Gothenburg, Sweden, has since the start developed a number of application concepts, based on the company’s unique and patent-protected carbon nanotechnology platform, aimed towards the global semiconductor industry.
Since 2017, when the industry first began to show a clear interest in Smoltek’s capacitor technology in particular, the company’s technology development has been directed with the aim of making these microscopically small capacitors even smaller, while maintaining performance within important parameters; such as high capacitance density, low leakage current, low equivalent series resistance and low inductance.
With this demonstration of the opportunities with Smoltek’s CNF-MIM technology, the company challenges the major players in the semiconductor industry about who has the technology to manufacture the thinnest capacitors in a comparable performance segment.
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News
November 5, 2025
Smoltek Semi has reached an important technical milestone in the development of the company’s carbon fiber-based CNF-MIM technology. The capacitors have successfully passed a 1,000-hour high-temperature durability test, confirming the robustness of the technology for advanced applications.
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Smoltek Semi has acquired a plasma-enhanced Atomic Layer Deposition (ALD) system to implement its advanced dielectric stack on carbon nanofibers. The system will significantly reduce the iteration time of coating processes while enabling innovation and IP generation in dielectric stack technology for carbon nanofiber electrodes.
News
October 16, 2025
Smoltek has been awarded another patent in the Multilayer Cap patent family – an innovation that can double or triple the capacitance density of our CNF-MIM capacitors. This is a key factor for Smoltek's business and technology development.
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September 17, 2025
Smoltek Semi has successfully participated in Semicon Taiwan 2025, invited by their strategic partner ITRI.
News
September 10, 2025
Smoltek Semi is selected by ITRI, as one out of three collaboration partners, to be part of their exhibition stand at Semicon Taiwan 2025. We are grateful to be able to present our ultra-thin CNF-MIM capacitor technology for powering next generation advanced semiconductor chips.
News
June 27, 2025
Smoltek Semi has cleared a significant milestone in the development of next-generation CNF-MIM capacitors. Samples from the latest prototype generation, fabricated with an advanced dielectric stack composed of zirconium oxide (ZrO₂) and aluminum oxide (Al₂O₃) have demonstrated exceptional stability under both temperature and voltage stress.