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CNF-MIM technology provides a capacitance density of over 1 µF/mm² in an ultra-thin 6 µm profile that fits underneath chips. Our additive manufacturing process works on silicon, glass, aluminum, and other substrates using a single atomic layer deposition cycle, reducing production costs compared to deep trench alternatives. This combination of high performance and design flexibility gives electronics manufacturers and capacitor producers a practical solution for next-generation miniaturization demands.
Our offer
Smoltek Semi’s CNF-MIM technology provides a capacitance density of over 1 µF/mm² in an ultra-thin 6 µm profile that fits underneath chips. Our additive manufacturing process works on silicon, glass, aluminum, and other substrates using a single atomic layer deposition cycle, reducing production costs compared to deep trench alternatives. This combination of high performance and design flexibility gives electronics manufacturers and capacitor producers a practical solution for next-generation electronic applications, from AI and HPC to automotive systems and aerospace technology. Here is just a few examples of all the applications for CNF-MIM capacitors.
AI workloads and high-performance computing (HPC) demand exceptional power delivery with up to eight times more capacitors than traditional servers. CNF-MIM technology provides superior capacitance density where conventional MLCCs reach their physical limits.
Silicon DTC solutions are costly and limit design flexibility. CNF-MIM capacitors deliver ultra-thin profiles with maximum capacitance at a fraction of the cost, enabling closer placement to processors for improved performance.
Building capacitors on unusual substrates like glass and flexible materials limits design possibilities. CNF-MIM can be manufactured on virtually any substrate, enabling thinner designs with longer battery life.
High-frequency 5G applications require exceptional stability and low losses. CNF-MIM delivers enhanced stability for high-frequency communication and RF circuits with minimal signal degradation where traditional capacitors introduce unwanted impedance.
Advanced driver assistance systems and EV electronics face vibration, temperature variations, and strict safety requirements. CNF-MIM technology provides robust performance for ADAS sensors and power management with automotive-qualified reliability.
Military applications demand components that withstand extreme environments with zero tolerance for failure. As dual-use technology, CNF-MIM offers military-grade performance for radar, communication systems, and avionics.
About us
Our approach combines 20+ years of carbon nanotechnology research from Chalmers University of Technology, patent protection across major semiconductor markets, and a team where most R&D staff hold Ph.D.s in nanotechnology and semiconductor processes.
Smoltek was founded in December2005, as a spin-off from research at Chalmers University of Technology with a focus on precisely controlling carbon nanostructure growth. Since then, Smoltek has developed this technology into practical manufacturing processes. Today, Smoltek Semi applies this proven technology platform to meet the electronic industry’s need for ultra-thin, high-density decoupling capacitors.
Smoltek’s intellectual property portfolio includes over 120 patents (granted and pending) covering core carbon nanotechnology, component structures, and manufacturing processes. This protection spans major markets including the US, Europe, China, Japan, and Korea, with a substantial focus on the semiconductor industry.
Most of our R&D team holds Ph.D.s in materials science, nanotechnology, or semiconductor engineering. Our technical depth spans from fundamental carbon nanotube growth to integration in semiconductor manufacturing.
Our process
We work with industrial partners through a structured development process that aligns with how large enterprises evaluate and integrate new technologies. Each stage builds on the previous one, with clear technical and commercial milestones.
We provide engineering samples of our CNF-MIM capacitors for your initial testing. Your technical team gets direct access to our R&D engineers to discuss performance data, manufacturing parameters, and potential applications. This stage typically involves lab-scale testing to validate basic functionality and compatibility.
Following positive initial results, we establish a formal collaboration agreement. This can take the form of a joint development project, feasibility study, or technical advisory agreement. We conduct detailed analysis of technical requirements, manufacturing integration, and commercial viability specific to your applications.
With proven technical and commercial feasibility, we forge a licensing partnership. You gain access to our IP portfolio, manufacturing know-how, and design documentation. Your engineering teams can then perform detailed design work and integrate our technology into your production processes.
Our relationship continues through commercial production. Your team retains access to our R&D specialists for technical support, process optimization, and co-development of next-generation solutions. This ensures continuous improvement and helps address evolving requirements.
Features
Traditional capacitor manufacturing faces fundamental limitations as devices shrink and performance requirements increase. Our CNF-MIM approach solves these problems through a different manufacturing philosophy and materials approach.
We grow carbon nanofibers to create massive surface area within minimal space, then deposit our metal-insulator-metal structure. This additive approach allows precise control of fiber length and density for optimal capacitance.
CNF-MIM capacitors can be manufactured on silicon, glass, aluminum, and other substrates. This flexibility supports emerging packaging approaches, including the industry shift toward glass interposers.
Our manufacturing process requires only one atomic layer deposition cycle to deposit the dielectric layer. This streamlined approach reduces production time and costs in high-volume manufacturing.
We use a proprietary ZrO₂–Al₂O₃ dielectric stack developed specifically for carbon nanofiber geometry. This combination delivers the electrical properties needed for high-density capacitors.
Frequently asked questions
We have demonstrated 1 µF/mm² (1,000 nF/mm²) capacitance density with an active layer thickness of just 6 µm. This combination of high capacitance and ultra-thin profile makes the technology suitable for under-chip integration where height constraints are critical. Prototypes using our ZrO₂–Al₂O₃ dielectric stack have passed temperature and voltage stress testing. Our development roadmap targets 3,000 nF/mm² in future generations.
We operate a fabless model with established manufacturing partnerships. ITRI handles front-end wafer processing while Tong Hsing provides back-end assembly and testing. Our additive process uses standard semiconductor equipment and can be integrated into existing production lines. We provide complete technology transfer packages including process specifications and quality control procedures.
Our licensing model includes three components: upfront licensing fees for patent access, non-recurring engineering fees for integration support and qualification assistance, and production royalties based on net sales of products incorporating our technology. The specific terms are structured based on your application and volume requirements.
We start with discrete capacitors for immediate market applications. The development roadmap includes embedded capacitors within chip packaging substrates, followed by on-chip integration for placement close to processors. Each step requires specific technical adaptations but builds on the same core CNF-MIM platform.
Our R&D team works directly with your engineering teams throughout the integration process. This includes design optimization for your specific applications, process parameter adjustment, qualification testing support, and ongoing technical consultation. We maintain this relationship through production and future product development.
Evaluating new capacitor technology requires understanding performance specifications, manufacturing requirements, and integration pathways. Here are answers to common questions about CNF-MIM technology from our technical discussions with industry partners.
We actively seek partnerships with capacitor manufacturers and electronics companies to bring CNF-MIM technology to market. Our R&D team works directly with prospective partners to evaluate commercial opportunities.
Contact usOur Promise
We understand that adopting disruptive technology requires transparency and predictability. Our partnership approach focuses on working together through each technical and commercial milestone in a disciplined and structured way.
You don’t need to commit to a full-scale license right away. We recommend starting with specific projects, such as feasibility studies or joint development work, to address particular technical issues. This approach enables your engineering teams to validate our technology within your existing systems and applications before making larger commitments.
We follow a structured development plan with specific performance targets for each generation. Gen-One samples have demonstrated 1 µF/mm² capacitance density with 6 µm thickness. Gen-Two (2026) and Gen-Three (2027) build on these proven results to achieve higher performance targets. We only advance to the next generation after meeting validated performance and reliability criteria.
We cover all aspects of CNF-MIM development, providing support throughout your evaluation and implementation process:
This complete capability means we can support your project from initial samples through commercial manufacturing.
Whitepaper
A deep dive into the technology behind CNF-MIM – get your free copy from Smoltek. This is not a marketing brochure, but a 10-page technical whitepaper authored by our nanotechnology researchers. Learn about the fundamental properties of carbon nanofibers, the catalytic growth process, and the applications enabled by the technology.
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